Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors. Jong Han Baek, Hyunju Seol, Kilwon Cho, Hoichang Yang, and Jae Kyeong Jeong.The Journal of Physical Chemistry C 2017, 121 Near-Infrared Promoted Wettability Recovery of Superhydrophilic ZnO. Dongfang Zhao, Ran Jia, Naikun Gao, Weishan Yan, Ling Zhang, Xi Li, and Duo Liu.ACS Applied Materials & Interfaces 2017, 9 High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties. Jozeph Park, Keun-Tae Oh, Dong-Hyun Kim, Hyun-Jun Jeong, Yun Chang Park, Hyun-Suk Kim, and Jin-Seong Park.Distinct Nucleation and Growth Kinetics of Amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A Step toward New Architectures. Humed Yusuf, Yingxin Guan, RB Jacobson, Max G. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Binghao Wang, Wei Huang, Lifeng Chi, Mohammed Al-Hashimi, Tobin J.ACS Applied Materials & Interfaces 2018, 10 Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures. Jan Krausmann, Shawn Sanctis, Jörg Engstler, Martina Luysberg, Michael Bruns, Jörg J.ACS Applied Materials & Interfaces 2019, 11 Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications. Jiazhen Sheng, TaeHyun Hong, DongHee Kang, Yeonjin Yi, Jun Hyung Lim, Jin-Seong Park.High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition. In-Hwan Baek, Jung Joon Pyeon, Seong Ho Han, Ga-Yeon Lee, Byung Joon Choi, Jeong Hwan Han, Taek-Mo Chung, Cheol Seong Hwang, Seong Keun Kim.Optically Induced Rapid Wetting Transition on Zn-Polar and O-Polar Zinc Oxide.
The Role of Cation Coordination in the Electrical and Optical Properties of Amorphous Transparent Conducting Oxides. ACS Applied Materials & Interfaces 2021, 13 Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. Katie Stallings, Jeremy Smith, Yao Chen, Li Zeng, Binghao Wang, Gabriele Di Carlo, Michael J.This article is cited by 208 publications. In contrast to the above results for TFTs fabricated with the organic self-assembled nanodielectric, ZnIn 4Sn 4O 15 TFTs fabricated with SiO 2 gate insulators exhibit electron mobilities of only ∼11 cm 2 V −1 s −1 with I on/ I off ratios ∼10 5, and a subthreshhold swing of ∼9.5 V/dec. It is shown that structural relaxation and densification by In 3+ and Sn 4+ mixing is effective in reducing carrier trap sites and in creating carrier-generating oxygen vacancies. The microstructural and electronic properties of ZITO semiconductor film compositions in the range Zn 9−2 xIn xSn xO 9+1.5 x ( x = 1−4) and ZnIn 8− xSn xO 13+0.5 x ( x = 1−7) were systematically investigated to elucidate those factors which yield optimum mobility, I on/ I off, and threshold voltage parameters. This structurally dense-packed semiconductor composition with minimal Zn 2+ incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of ∼90 cm 2 V −1 s −1 (104 cm 2 V −1 s −1 maximum obtained for patterned ZITO films), with I on/ I off ratio ∼10 5, a subthreshhold swing of ∼0.2 V/dec, and operating voltage <2 V for patterned devices with W/ L = 50. Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn 4Sn 4O 15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator.
0 kommentar(er)
